Va 0[V] Applied voltage Tl 300[K] Lattice Temperature Na 1e15[1/cm^3] Acceptor concentration Nd 1e15[1/cm^3] Donor concentration epsilonr_param 11.8 Relative permittivity Eg0_param 1.12[V] Band gap chi0_param 4.05[V] Electron affinity Ni 1.25e10[1/cm^3] Intrinsic carrier concentration Nc_param Ni*exp(Eg0_param*e_const/(2*k_B_const*Tl)) Conduction band density of states Nv_param Ni*exp(Eg0_param*e_const/(2*k_B_const*Tl)) Valence band density of states taun_param 1e-6[s] Electron lifetime taup_param taun_param Hole lifetime