Semiconductor Diode

Model ID: 114


A semiconductor diode consists of two regions with different doping: a p-type region with a dominant concentration of holes, and an n-type region with a dominant concentration of electrons.

The model presented here formulates the problem using three dependent variables: psi (electric potential), n, and p. Even in this model’s simplest form, strong nonlinear dependencies are present.

Ce modèle a été construit avec les éléments suivants: