Towards Modelling Semiconductor Heterojunctions

R. Millett[1], J. Wheeldon[2], T. Hall[1], and H. Schriemer [1,2]
[1] Centre for Research in Photonics, School of Information Technology and Engineering, University of Ottawa, Canada
[2] Centre for Research in Photonics, Dept. of Physics, University of Ottawa, Canada

A 2D multiphysics model has been developed to simulate heterojunctions separating abruptly doped semiconductor layers of different dopant concentrations.

Numerical results are presented for the case of nN, pN and PpN heterojunctions, and a general procedure for simulating multiple heterojunctions is described.

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