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Add piezo-resistive coefficient in doped channel for MOSFET

Isha Electrical Engineering/MEMS PhD student

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Hi,

I am simulating the Ids current in a MOSFET. I want to see the Ids current change on application of mechanical stress. For that, I wanted to add the π-44 piezo-resistive coefficient of the doped channel region...

How do I change the property of just that region? And should adding this region property help to see variations in Ids with stress?

Thank you very much..

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isha3

0 Replies Last Post 18 avr. 2019, 12:32 UTC−4
COMSOL Moderator

Hello Isha

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