La Bibliothèque d'Applications présente des modèles construits avec COMSOL Multiphysics pour la simulation d'une grande variété d'applications, dans les domaines de l'électromagnétisme, de la mécanique des solides, de la mécanique des fluides et de la chimie. Vous pouvez télécharger ces modèles résolus avec leur documentation détaillée, comprenant les instructions de construction pas-à-pas, et vous en servir comme point de départ de votre travail de simulation. Utilisez l'outil de recherche rapide pour trouver les modèles et applications correspondant à votre domaine d'intérêt. Notez que de nombreux exemples présentés ici sont également accessibles via la Bibliothèques d'Applications intégrée au logiciel COMSOL Multiphysics® et disponible à partir du menu Fichier.
Surface acoustic phonons and surface roughness have an important effect on the carrier mobility, especially in the thin inversion layer under the gate in MOSFETs. The Lombardi surface mobility model adds surface scattering resulting from these effects to an existing mobility model using ... En savoir plus
This model calculates the DC characteristics of a simple MOSFET. The drain current versus gate voltage characteristics are first computed in order to determine the threshold voltage for the device. Then the drain current vs drain voltage characteristics are computed for several gate ... En savoir plus
In this second half of a two-part example, a 3D model of a trench-gate IGBT is built by extruding the 2D model from the first half. Unlike the 2D model, now it is possible to arrange the alternating n+ and p+ emitters along the direction of extrusion as in the real device. This more ... En savoir plus
This model calculates the current and charge characteristics of a floating gate Electrically Erasable Programmable Read-Only Memory (EEPROM) device. A stationary study demonstrates the effects of varying the charge stored on the floating gate by computing Current-Voltage curves as a ... En savoir plus
In this first half of a two-part example, a 2D model of a trench-gate IGBT is built, which will be extended to 3D in the second half. In general, it is the most efficient to start with a 2D model to make sure everything works as expected, before extending it to 3D. The Caughey&ndash ... En savoir plus
This conceptual example shows how to handle a transient contact problem with stick-slip friction transition. A soft hollow pipe subjected to gravity is released at the top of a halfpipe. The pipe motion varies between sliding and rolling, depending on its position in the halfpipe and its ... En savoir plus
During an internal short circuit of a battery, the two electrode materials are internally and electronically interconnected, giving rise to high local current densities. Internal short circuits may occur in a lithium-ion battery due to, for instance, lithium dendrite formation or a ... En savoir plus
This model shows how to set up a simple Bipolar Transistor model. The output current-voltage characteristics in the common-emitter configuration are computed and the common-emitter current gain is determined. En savoir plus
MOSFETs typically operate in three regimes depending on the drain-source voltage for a given gate voltage. Initially the current-voltage relation is linear, this is the Ohmic region. As the drain-source voltage increases the extracted current begins to saturate, this is the saturation ... En savoir plus
This example shows how to set up self-contact for a coil spring. As the spring is compressed by a vertical force applied to one of its ends, it comes into to contact with itself and starts to rotate. En savoir plus