Multiphysics Modeling of Semiconductors, Part 2: Device Physics — On Demand
Semiconductor device simulation can be used to analyze carrier transport, quantum effects, and multiphysics interactions in advanced electronic and optoelectronic devices. In this webinar, we will introduce the Semiconductor Module, an add-on to the COMSOL Multiphysics® software, that provides dedicated features for the analysis of semiconductor device operation at the fundamental physics level.
This module includes functionality based on the drift-diffusion equations, with the optional density-gradient contribution for quantum confinement effects. It is useful for simulating a range of conventional and emerging devices, including bipolar transistors, metal–oxide–semiconductor field-effect transistors (MOSFETs), insulated-gate bipolar transistors (IGBTs), organic field-effect transistors (OFETs), LEDs, memristors, and more. Thermal effects, optical transitions, and other multiphysics effects available in the module can be readily added to a model.
Additional capabilities featuring the Schrödinger and Schrödinger-Poisson equations can be used for modeling quantum-confined systems such as superlattices, quantum wells, quantum wires, and quantum dots, as well as Bose–Einstein condensates and vortex lattice formation.
This is the second webinar in a three-part series showcasing the capabilities of COMSOL Multiphysics® relevant to the semiconductor industry.
Access the Recording of Multiphysics Modeling of Semiconductors, Part 2: Device Physics
To access the recording, please create a new account or log into your existing account. You will need a COMSOL Access account to watch the video.
For questions regarding the video or upcoming events, contact info-uk@comsol.com.
On-Demand Webinar Details
This is a recording of a webinar that originally aired on July 28, 2026
