La Bibliothèque d'Applications présente des modèles construits avec COMSOL Multiphysics pour la simulation d'une grande variété d'applications, dans les domaines de l'électromagnétisme, de la mécanique des solides, de la mécanique des fluides et de la chimie. Vous pouvez télécharger ces modèles résolus avec leur documentation détaillée, comprenant les instructions de construction pas-à-pas, et vous en servir comme point de départ de votre travail de simulation. Utilisez l'outil de recherche rapide pour trouver les modèles et applications correspondant à votre domaine d'intérêt. Notez que de nombreux exemples présentés ici sont également accessibles via la Bibliothèques d'Applications intégrée au logiciel COMSOL Multiphysics® et disponible à partir du menu Fichier.
In this tutorial model, a six step thrust bearing is analyzed. A step thrust bearing consists of a stepped bearing surface on which the end of the shaft rotates. The entire assembly is submerged in a lubricant. The shaft collar is assumed to be spinning without any axial motion in the ... En savoir plus
This example demonstrates how an ESD event causes logic error of a microchip on a PCB board. The ESD current is based on the extended HBM (Human Body Model) and it is predefined in the Lumped Port feature. En savoir plus
This verification model uses the Electromagnetic Waves, Boundary Elements interface to simulate the RCS of perfectly conducting sphere. The simulated result is compared to analytical calculation to verify the accuracy. En savoir plus
This model shows how to include the nonlinear (large signal) behavior of certain lumped components in a simplified loudspeaker analysis. The mechanical and electrical system is modeled using an equivalent electrical circuit. The large signal compliance CMS(x) and force factor BL(x) are ... En savoir plus
This model solves the Boltzmann equation in two-term approximation for a mixture of nitrogen and oxygen representing a background gas of dry air. Electron transport coefficients and source terms are computed by suitable integration of the electron energy distribution function over ... En savoir plus
A gate-all-around MOSFET consists of a nanowire with a gate electrode wrapped around the circumference. Since the entire nanowire forms the channel, this configuration provides the best possible electrostatic control of the channel and offers a good candidate for the miniaturization of ... En savoir plus
The model is defined as a benchmark case in norm 15026:2007 annex A. The purpose of the model is to calculate the temperature and moisture profiles at different times after a change in the external conditions (temperature and relative humidity) inside a wall material (kind of concrete). ... En savoir plus
This model demonstrates how to couple the Semiconductor interface to the Heat Transfer in Solids interface. A thermal analysis is performed on the existing bipolar transistor model in the case when the device is operated in the active-forward configuration. The Semiconductor interface ... En savoir plus
This example extends the corrosion protection system analysis of the single oil platform example by modeling the influence of multiple oil platforms placed in an array. The use of the Current Distribution on Edges, BEM interface significantly reduces the problem size and computational ... En savoir plus
This tutorial analyzes the hysteresis of the conductance-gate-voltage (G-Vg) curves of an InAs nanowire FET, using the density-gradient theory to add the effect of quantum confinement to the conventional drift-diffusion formulation, without a large increase of computational costs. The ... En savoir plus