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Semiconductor Devices Articles de Blog

Extracting Specific Contact Resistivity with a Benchmark Model

March 16, 2022

You can now add contact resistance to metal contacts using the Semiconductor Module. In this blog post, we’ll explore a benchmark model that takes advantage of this new functionality.

Optimizing Solar Cell Designs with a Simulation App

October 28, 2021

The SolCelSim app, designed by an MSc student at the University of Zilina, enables researchers to simulate solar cell designs, even if they are unfamiliar with simulation software.

Simulating a Silicon Quantum Dot in a Uniform Magnetic Field

January 26, 2021

Solar cells, LEDs, displays, photodetectors, and quantum computing are all potential applications of quantum dots, an essential aspect in the field of nanotechnology.

k • p Method for Strained Wurtzite GaN Band Structure

December 1, 2020

Model a wide range of semiconductor systems, such as particles with spins and strained wurtzite crystals, using multicomponent wave function functionality in the Schrödinger Equation interface.

Model Vortex Lattice Formation in a Bose–Einstein Condensate

November 17, 2020

Bose–Einstein condensation can cause superfluidity, superconductivity, lasers, and trapped dilute cold atoms. When such systems are subjected to rotating perturbation, it forms a vortex lattice.

Computational Electromagnetics Modeling: Which Module to Use?

July 28, 2020

If you work with a particular electromagnetic device or application area, you might be wondering which module in the COMSOL product suite is right for you. Keep reading for a comprehensive intro.

Three Semiconductor Device Models Using the Density-Gradient Theory

December 2, 2019

You can use the density-gradient theory to model semiconductor devices. Here are 3 examples: a Si inversion layer, Si nanowire MOSFET, and InSb p-channel FET.

Intro to Density-Gradient Theory for Semiconductor Device Simulation

November 27, 2019

The density-gradient theory is a computationally efficient way to include quantum confinement in the conventional drift-diffusion formulation commonly used for simulating semiconductor devices.

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