Discussion Forum

Hey everyone,

I'm trying to model impurity diffusion (Dopant) into Si substrate using Transport of Diluted Species (Tds) and the MOSFET device from the obtained diffused impurity profile using the Semiconductor (Semi) modules. I am able to successfully model dopant diffusion using the Tds module, but unable to transfer this dopant profile to Semi module to assign doping regions under the source and drain parts of the MOSFET device.

Here's what I tried: Tried to insert the concentration variable (comp1.c) from Tds module into the Semi module under analytical doping section and got the following error:

-Undefined variable.

• Variable: comp1.c

• Geometry: geom1

• Domain: 6

Is the error due to "comp1.c" being an internally generated variable which the Semi module cannot access? Is there any other way to transfer dopant diffusion profile from Tds module to Semi module? Any hints would be greatly helpful. Thanks!