Laser Heating of a Silicon Wafer
Application ID: 13835
A silicon wafer is heated up by a laser that moves radially in and out over time. In addition, the wafer itself is rotated on its stage. The incident heat flux from the laser is modeled as a spatially distributed heat source on the surface. The transient thermal response of the wafer is shown. The peak, average, and minimum temperature during the heating process is computed, as well as the temperature variations across the wafer.
This model example illustrates applications of this type that would nominally be built using the following products:
however, additional products may be required to completely define and model it. Furthermore, this example may also be defined and modeled using components from the following product combinations:
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