La Bibliothèque de Modèles présente des modèles construits avec COMSOL Multiphysics pour la simulation d'une très grande variété d'applications, dans les domaines électrique, mécanique, fluidique et chimique. Vous pouvez télécharger ces modèles résolus avec leur documentation détaillée, notamment les instructions de construction pas à pas, et vous en servir comme point de départ de votre travail de simulation. Utilisez l'outil de recherche rapide pour trouver les modèles correspondant à votre domaine d'intérêt, et connectez vous avec votre compte COMSOL Access, associé à une licence COMSOL, afin de télécharger les fichiers modèles.
COMSOL-News-Magazine-2017
COMSOL-News-Magazine-2017-Special-edition-acoustics
COMSOL-News-Magazine-2016

DC Characteristics of a MOS Transistor (MOSFET)

This model calculates the DC characteristics of a simple MOSFET. The drain current versus gate voltage characteristics are first computed in order to determine the threshold voltage for the device. Then the drain current vs drain voltage characteristics are computed for several gate voltages. The linear and saturation regions for the device can be identified from these plots.

3D Analysis of a Bipolar Transistor

This model shows how to set up a 3D simulation of a n-p-n bipolar transistor. It is a 3D version of the device shown in the Bipolar Transistor model, and demonstrates how to extend semiconductor modeling into 3D using COMSOL Multiphysics. As in the 2D version of this model, the device is simulated whilst operating in the common-emitter regime. A voltage driven study is computed to characterize ...

InGaN/AlGaN Double Heterostructure LED

This model simulates a GaN based light emitting diode device. The emission intensity, spectrum, and efficiency are calculated as a function of the driving current. Direct radiative recombination across the bandgap is modeled, as well as non-radiative Auger and Trap-Assisted Scattering processes. This results in a sub-linear increase in emission intensity with increasing current, which is a ...

GaAs PIN Photodiode

This simple model demonstrates how to use the Semiconductor Optoelectronics interfaces to model a simple GaAs PIN diode structure. Both the stimulated and spontaneous emission in the semiconductor are accounted for. The corresponding adsorption of the light and the associated change in the complex refractive index are included in a self consistent manner.

Thermal Analysis of a Bipolar Transistor

This model demonstrates how to couple the *Semiconductor* interface to the *Heat Transfer in Solids* interface. A thermal analysis is performed on the existing [bipolar transistor model](/model/bipolar-transistor-14615) in the case when the device is operated in the active-forward configuration. The *Semiconductor* interface calculates the carrier dynamics and currents within the device and ...

Si Solar Cell 1D

This tutorial model uses a simple 1D model of a silicon solar cell to illustrate the basic steps to set up and perform a semiconductor simulation with the Semiconductor Module. A user-defined expression is used for the photo-generation rate and the result shows typical I-V and P-V curves of solar cells. The carrier generation mechanism from the photovoltaic effect is not modeled in detail. ...

GaAs p-n Junction Infrared LED Diode

This model simulates an LED that emits in the infrared part of the electromagnetic spectrum. The device structure is made up of a single p-n junction formed by a layer of p-type doping near the top surface of an otherwise n-type wafer. This kind of device geometry is simple and cheap to produce and similar LEDs are found in many household applications, e.g. the IR emitters in TV remote ...

Si Solar Cell with Ray Optics

The Si Solar Cell with Ray Optics app combines the Ray Optics Module and the Semiconductor Module to illustrate the operation of a silicon solar cell for a specific date and location. The Ray Optics Module computes the average illumination for a date and location that are chosen by the app's user. Then, the Semiconductor Module computes the normalized output characteristics of the solar cell ...

Breakdown in a MOSFET

MOSFETs typically operate in three regimes depending on the drain-source voltage for a given gate voltage. Initially the current-voltage relation is linear, this is the Ohmic region. As the drain-source voltage increases the extracted current begins to saturate, this is the saturation region. As the drain-source voltage is further increased the breakdown region is entered, where the current ...

PN-Diode Circuit

This model extracts spice parameters for a silicon p-n junction diode. The spice parameters are used to create a lumped-element equivalent circuit model of a half-wave rectifier that is compared to a full device level simulation. In this example, a device model is made by connecting a 2D meshed p-n junction diode to a circuit containing a sinusoidal source, a resistor and a ground to form a ...

First
Previous
1–10 of 26