La Bibliothèque d'Applications présente des modèles construits avec COMSOL Multiphysics pour la simulation d'une grande variété d'applications, dans les domaines de l'électromagnétisme, de la mécanique des solides, de la mécanique des fluides et de la chimie. Vous pouvez télécharger ces modèles résolus avec leur documentation détaillée, comprenant les instructions de construction pas-à-pas, et vous en servir comme point de départ de votre travail de simulation. Utilisez l'outil de recherche rapide pour trouver les modèles et applications correspondant à votre domaine d'intérêt. Notez que de nombreux exemples présentés ici sont également accessibles via la Bibliothèques d'Applications intégrée au logiciel COMSOL Multiphysics® et disponible à partir du menu Fichier.
Surface acoustic phonons and surface roughness have an important effect on the carrier mobility, especially in the thin inversion layer under the gate in MOSFETs. The Lombardi surface mobility model adds surface scattering resulting from these effects to an existing mobility model using ... En savoir plus
This benchmark model simulates a graded heterojunction using the thermionic emission formulation for the charge transfer over the junction. It shows the additional contribution to the current density from the quantum tunneling effect across the potential barrier, using the WKB ... En savoir plus
This 3D model of a nanowire MOSFET employs the density-gradient theory to add the effect of quantum confinement to the conventional drift-diffusion formulation, without requiring excessively high computational costs. The oxide layer is simulated explicitly with geometric domains, and ... En savoir plus
This tutorial analyzes the hysteresis of the conductance-gate-voltage (G-Vg) curves of an InAs nanowire FET, using the density-gradient theory to add the effect of quantum confinement to the conventional drift-diffusion formulation, without a large increase of computational costs. The ... En savoir plus
This simple model demonstrates how to use the Semiconductor Optoelectronics interfaces to model a simple GaAs PIN diode structure. Both the stimulated and spontaneous emission in the semiconductor are accounted for. The corresponding absorption of the light and the associated change in ... En savoir plus
This tutorial model solves the Gross–Pitaevskii Equation for the vortex lattice formation in a rotating Bose–Einstein condensate bound by a harmonic trap. The equation is essentially a nonlinear single-particle Schrödinger Equation, with the inter-particle interaction represented by a ... En savoir plus
This tutorial uses a simple 1D model of a silicon solar cell to illustrate the basic steps to set up and perform a device physics simulation with the Semiconductor Module. A user-defined expression is used for the photo-generation rate and the result shows typical I–V and P–V curves of ... En savoir plus
This benchmark model computes the valence band structure of an unstrained and a strained bulk GaN wurtzite crystal, as a tutorial for users who wish to set up multiple wave function components with the Schrödinger Equation interface. The model follows the formulation given in the ... En savoir plus
An ion-sensitive field-effect transistor (ISFET) is constructed by replacing the gate contact of a MOSFET with an electrolyte of interest. The concentration of a specific ionic species in the electrolyte can be determined by measuring the change in the gate voltage due to the interaction ... En savoir plus
This tutorial model solves a two-component Schrödinger equation for the eigenstates of a simple silicon quantum dot in a uniform magnetic field, based on the paper by Jock et al. on the topic of spin-orbit qubits. The built-in domain condition Lorentz Force for the Schrödinger Equation ... En savoir plus
