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A Computational Approach for Simulating p-Type Silicon Piezoresistor Using Four Point Bending Setup
Publié en 2013
The piezoresistance effect is defined as change in resistance due to applied stress. Silicon has a relatively large piezoresistance effect which has been known since 1954. A four point bending setup is proposed and designed to analyze the piezoresistance effect in p-type silicon. This setup is used to apply uniform and uniaxial stress along the crystal direction. The main aim of this work is to investigate the piezoresistive characteristic of p-type resistors as a function of doping concentrations using COMSOL Multiphysics®. Simulation results are compared with experimental data.
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- tan_presentation.pdf - 0.47MB
- tan_paper.pdf - 1.06MB
- tan_abstract.pdf - 0.38MB