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Pseudo-3D Multiphysics Simulation of a Hydride Vapor Phase Epitaxy Reactor
Publié en 2012
Gallium nitride (GaN) and its related nitride alloys with special physical properties are in technical areas of high interest. The growing of gallium nitride boules on non-native sapphire or silicon carbide requires complicated mechanisms of defect reduction in the lattice structure. Thus the production of gallium nitride substrates is a challenge. Hydride Vapor Phase Epitaxy (HVPE) is a promising technology for the production of large GaN bouls. In this study a pseudo-3D simulation of non-isothermal flow and mass transport have been performed to analyze the influence of the reactor geometry and several process parameters.
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- hackert_oschaatzchen_poster.pdf - 0.75MB
- hackert_oschaatzchen_paper.pdf - 0.79MB
- hackert_oschaatzchen_abstract.pdf - 0.2MB