DC Characteristics of a MESFET
Application ID: 14999
In a MESFET, the gate forms a rectifying junction that controls the opening of the channel by varying the depletion width of the junction.
In this model we simulate the response of a n-doped GaAs MESFET to different drain and gate voltages. For a n-doped material the electron concentration is expected to be orders of magnitude larger than the hole concentration. Accordingly, it is possible to use the majority carrier option to compute an accurate solution with less degrees of freedom then it would normally be needed using the electrons and holes formulation.
The agreement between the two methods is excellent, but the majority carrier formulation solves twice as fast.
This model example illustrates applications of this type that would nominally be built using the following products:
however, additional products may be required to completely define and model it. Furthermore, this example may also be defined and modeled using components from the following product combinations:
The combination of COMSOL® products required to model your application depends on several factors and may include boundary conditions, material properties, physics interfaces, and part libraries. Particular functionality may be common to several products. To determine the right combination of products for your modeling needs, review the Grille des Spécifications and make use of a free evaluation license. The COMSOL Sales and Support teams are available for answering any questions you may have regarding this.