Application ID: 14617
This one-dimensional model simulates three different heterojunction configurations under forward and reverse bias. The model shows the difference in using the continuous quasi-Fermi levels model as opposed to the thermionic emission model to determine the current transfer occurring between the different materials creating the junction under bias. The energy levels obtained with the model are then compared between each configuration in order to emphasize the origin of the current transfers, that is, whether it is primarily from holes in the valence band or from electrons in the conduction band. The J-V curves (current density vs. applied voltage) obtained from each simulation are compared with results obtained from the specialized literature.
This model is included as an example in the following products:Semiconductor Module
however additional products may be needed to reproduce it. This example may be created and run using components from the following product combinations:
The combination of COMSOL® products required to model your application depends on several factors and may include boundary conditions, material properties, physics interfaces, and part libraries. Particular functionality may be common to several products. To determine the right combination of products for your modeling needs, review the Grille de spécifications and make use of a free evaluation license. The COMSOL Sales and Support teams are available for answering any questions you may have regarding this.