Memristor
Application ID: 141181
This model captures the dynamic resistive switching behavior of an oxide-based memristor. The device features a thin metal oxide layer sandwiched between two metal electrodes. When a voltage is applied, oxygen vacancies within the oxide layer migrate, acting as charge carriers and enabling resistive switching.
The model incorporates key physical phenomena, including oxygen vacancy drift–diffusion, current continuity, and heat transfer, all fully coupled through a multiphysics framework. These interactions are essential to accurately reproduce the device's behavior. Simulation results reveal the characteristic pinched hysteresis curve of memristors, closely aligning with experimental data reported in the literature.
Ref: Kim, Sungho, ShinHyun Choi, and Wei Lu. "Comprehensive physical model of dynamic resistive switching in an oxide memristor." ACS nano 8, no. 3 (2014): 2369-2376.
This model example illustrates applications of this type that would nominally be built using the following products:
however, additional products may be required to completely define and model it. Furthermore, this example may also be defined and modeled using components from the following product combinations:
- COMSOL Multiphysics® et
- soit le Module Electric Discharge, ou Module Semiconductor
The combination of COMSOL® products required to model your application depends on several factors and may include boundary conditions, material properties, physics interfaces, and part libraries. Particular functionality may be common to several products. To determine the right combination of products for your modeling needs, review the Grille des Spécifications and make use of a free evaluation license. The COMSOL Sales and Support teams are available for answering any questions you may have regarding this.