P–N Junction 1D

Application ID: 14621

This simple benchmark model computes the potential and carrier concentrations for a one-dimensional p-n junction using both the finite element and finite volume methods. The results are compared with an equivalent device from the book, "Semiconductor Devices: A Simulation Approach," by Kramer and Hitchon.

This model example illustrates applications of this type that would nominally be built using the following products: