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PN-Junction 1D

Application ID: 14621


This simple benchmark model computes the potential and carrier concentrations for a one-dimensional p-n junction using both the finite element and finite volume methods. The results are compared with an equivalent device from the book, "Semiconductor Devices: A Simulation Approach," by Kramer and Hitchon.

Ce modèle a été construit avec les éléments suivants:

Semiconductor Module

The combination of COMSOL® products required to model your application depends on the physics interfaces that define it. Particular physics interfaces may be common to several products (see the Specification Chart for more details). To determine the right combination of products for your project, you should evaluate all of your needs in light of each product\'s capabilities, consultation with the COMSOL Sales and Support teams, and the use of an evaluation license.