La Bibliothèque d'Applications présente des modèles construits avec COMSOL Multiphysics pour la simulation d'une grande variété d'applications, dans les domaines de l'électromagnétisme, de la mécanique des solides, de la mécanique des fluides et de la chimie. Vous pouvez télécharger ces modèles résolus avec leur documentation détaillée, comprenant les instructions de construction pas-à-pas, et vous en servir comme point de départ de votre travail de simulation. Utilisez l'outil de recherche rapide pour trouver les modèles et applications correspondant à votre domaine d'intérêt. Notez que de nombreux exemples présentés ici sont également accessibles via la Bibliothèques d'Applications intégrée au logiciel COMSOL Multiphysics® et disponible à partir du menu Fichier.
In a MESFET, the gate forms a rectifying junction that controls the opening of the channel by varying the depletion width of the junction. In this model we simulate the response of a n-doped GaAs MESFET to different drain and gate voltages. For a n-doped material the electron ... En savoir plus
Drop tests are used to evaluate how consumer products respond to impacts and high accelerations. In this example, the Solid Mechanics, Explicit Dynamics interface is used to numerically simulate a drop test of a mobile phone, highlighting the permanent deformation of the aluminum case ... En savoir plus
This model shows how to model the avalanche breakdown due to the impact ionization in a Silicon Carbide diode. The current-voltage (I-V) characteristics of the device are presented as well as the electric field distribution plot. Furthermore, the carrier generation term has been computed ... En savoir plus
This model computes the input impedance/admittance to an acoustic system in the frequency domain. The system here represents a typical measurement setup used for testing hearing aids and includes domains with thermoviscous boundary layer losses. The input admittance, computed in the ... En savoir plus
This model shows how to model a simple Shockley diode— a four-layer PNPN semiconductor device. The Shockley diode is also named as thyristor. In this model, the Analytic Doping Model node is utilized to define the doping profiles for each domain. A time-dependent study is employed to ... En savoir plus
In this example, the dynamics of a hopping hoop is simulated. A rigid rolling ring with a point mass on the perimeter can, under certain conditions, jump up from the surface on which it is rolling. The effects of different parameters like initial velocity and friction are explored. You ... En savoir plus
This example shows how to model a FinFET in 3D. The I-V characteristics of the device are simulated. First, the gate voltage is swept to obtain the drain current versus gate voltage plot. Then, the drain current versus drain voltage characteristics are computed for fixed gate voltages. En savoir plus
When a droplet is placed on a substrate on which surface acoustic waves (SAWs) are traveling, the energy of the SAWs is transferred into the droplet to form an acoustic field. The transferred energy is attenuated and generates a streaming flow. This type of streaming enables contactless ... En savoir plus
In a diode or a transistor, when a p-n junction is reverse-biased (the p-side is connected to a lower potential than the n-side), ideally, no current should flow. However, due to minority carriers (electrons in the p-side and holes in the n-side), a small current, known as the reverse ... En savoir plus
A tube connection consisting of a flange with eight prestressed bolts is subjected to a set of loads: an internal pressure, an axial force, and an external bending moment. Due to two symmetry planes, it is sufficient to only consider one quarter of the full geometry. The study ... En savoir plus