 Electrostatics with charge conservation | | | | |
| Frequency domain | | | | |
| Stationary | | | | |
| Time dependent | | | | |
| Semiconductor | | | | |
| Semiconductor Initialization | | | | |
| Small-Signal Analysis, Frequency Domain | | | | |
| Stationary | | | | |
| Time Dependent | | | | |
| Semiconductor Optoelectronics, Beam Envelopes1 | | | | |
| Frequency-Stationary1 | | | | |
| Frequency-Transient1 | | | | |
| Small-Signal Analysis, Frequency Domain1 | | | | |
| Semiconductor Optoelectronics, Frequency Domain1 | | | | |
| Frequency-Stationary1 | | | | |
| Frequency-Transient1 | | | | |
| Small-Signal Analysis, Frequency Domain1 | | | | |
| Surface Charge Density | | | | |
| Thin Insulator Gate | | | | |
| Continuity/Heterojunction | | | | |
| Continuous Quasi-Fermi Levels Model | | | | |
| Thermionic Emission Model | | | | |
| Electrostatics Boundary Conditions | | | | |
| Distributed Capacitance | | | | |
| Electric Displacement Field | | | | |
| Electric Potential | | | | |
| External Surface Charge Accumulation | | | | |
| Floating Gate | | | | |
| Floating Potential | | | | |
| Ground | | | | |
| Periodic Condition | | | | |
| Surface Charge Accumulation | | | | |
| Terminal | | | | |
| Zero Charge | | | | |
| Insulation | | | | |
| Surface Traps: Discrete Energy Levels | | | | |
| Surface Traps: Continuous Energy Levels |
| Insulator Interface | | | | |
| Surface Traps: Continuous Energy Levels | | | | |
| Surface Traps: Discrete Energy Levels | | | | |
| Tunneling: Fowler-Nordheim Model | | | | |
| Tunneling: User defined | | | | |
| Metal Contact | | | | |
| Ideal Ohmic | | | | |
| Ideal Schottky | | | | |
| Fermi-Dirac | | | | |
| Maxwell-Boltzmann | | | | |
| Finite Element | | | | |
| Finite Element (Log Equation Formulation) | | | | |
| Finite Volume | | | | |
| Electrostatics Domain Properties | | | | |
| Charge Conservation | | | | |
| Space Charge Density | | | | |
| Semiconductor Material Model | | | | |
| Incomplete Ionization | | | | |
| Band gap narrowing | | | | |
| Empirical models: Slotboom and Jain-Roulston | | | | |
| Analytic Doping Model | | | | |
| Box distribution (with preset profiles) | | | | |
| User defined distribution | | | | |
| Geometric Doping Model | | | | |
| Boundary Selection for Doping Profile | | | | |
| Preset profiles | | | | |
| User defined profile | | | | |
| Auger Recombination | | | | |
| Direct Recombination | | | | |
| Impact Ionization Generation | | | | |
| Shockley-Read-Hall Recombination | | | | |
| User-Defined Generation | | | | |
| User-Defined Recombination | | | | |
| Arora Mobility Model | | | | |
| Caughey-Thomas Mobility Model | | | | |
| Fletcher Mobility Model | | | | |
| Lombardi Surface Mobility Model | | | | |
| Power Law Mobility Model | | | | |
| User Defined Mobility Model | | | | |
| Indirect Optical Transitions | | | | |
| Empirical silicon absorption | | | | |
| User defined absorption | | | | |
| Optical Transitions | | | | |
| Spontaneous/Stimulated Emission | | | | |
| Direct bandgap model | | | | |
| User defined transition model | | | | |
| Analytic Trap Density | | | | |
| Box distribution (with preset profiles) | | | | |
| User defined distribution | | | | |
| Geometric Trap Density | | | | |
| Boundary Selection for Trap Density | | | | |
| Preset profiles | | | | |
| User defined profile | | | | |
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